Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 1.063
Each (Supplied on a Reel) (ex VAT)
₪ 1.244
Each (Supplied on a Reel) (inc VAT)
100
₪ 1.063
Each (Supplied on a Reel) (ex VAT)
₪ 1.244
Each (Supplied on a Reel) (inc VAT)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 400 | ₪ 1.063 | ₪ 106.28 |
500 - 900 | ₪ 0.797 | ₪ 79.71 |
1000 - 4900 | ₪ 0.727 | ₪ 72.72 |
5000 - 9900 | ₪ 0.643 | ₪ 64.33 |
10000+ | ₪ 0.587 | ₪ 58.73 |
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Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.