onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23

RS Stock No.: 807-5201PBrand: onsemiManufacturers Part No.: BSR58
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

8 to 80mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.97mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.97mm

Width

1.3mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Stock information temporarily unavailable.

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Stock information temporarily unavailable.

₪ 1.063

Each (Supplied on a Reel) (ex VAT)

₪ 1.244

Each (Supplied on a Reel) (inc VAT)

onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23
Select packaging type

₪ 1.063

Each (Supplied on a Reel) (ex VAT)

₪ 1.244

Each (Supplied on a Reel) (inc VAT)

onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
100 - 400₪ 1.063₪ 106.28
500 - 900₪ 0.797₪ 79.71
1000 - 4900₪ 0.727₪ 72.72
5000 - 9900₪ 0.643₪ 64.33
10000+₪ 0.587₪ 58.73

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

8 to 80mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.97mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.97mm

Width

1.3mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.