Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
20 → 100mA
Maximum Drain Source Voltage
0.5 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 2.07
Each (Supplied as a Tape) (ex VAT)
₪ 2.422
Each (Supplied as a Tape) (inc VAT)
50
₪ 2.07
Each (Supplied as a Tape) (ex VAT)
₪ 2.422
Each (Supplied as a Tape) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
50 - 200 | ₪ 2.07 | ₪ 103.48 |
250 - 450 | ₪ 1.161 | ₪ 58.03 |
500 - 2450 | ₪ 1.105 | ₪ 55.24 |
2500 - 4950 | ₪ 0.867 | ₪ 43.35 |
5000+ | ₪ 0.769 | ₪ 38.46 |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
20 → 100mA
Maximum Drain Source Voltage
0.5 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.