Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 3.608
Each (Supplied on a Reel) (ex VAT)
₪ 4.221
Each (Supplied on a Reel) (inc VAT)
5
₪ 3.608
Each (Supplied on a Reel) (ex VAT)
₪ 4.221
Each (Supplied on a Reel) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | ₪ 3.608 | ₪ 18.04 |
50 - 95 | ₪ 2.727 | ₪ 13.63 |
100 - 245 | ₪ 2.237 | ₪ 11.19 |
250 - 495 | ₪ 1.748 | ₪ 8.74 |
500+ | ₪ 1.678 | ₪ 8.39 |
Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.