Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 3.622
Each (In a Pack of 5) (ex VAT)
₪ 4.238
Each (In a Pack of 5) (inc VAT)
5
₪ 3.622
Each (In a Pack of 5) (ex VAT)
₪ 4.238
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 3.622 | ₪ 18.11 |
50 - 95 | ₪ 2.741 | ₪ 13.70 |
100 - 245 | ₪ 2.251 | ₪ 11.26 |
250 - 495 | ₪ 1.762 | ₪ 8.81 |
500+ | ₪ 1.692 | ₪ 8.46 |
Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.