Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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₪ 3.874
Each (Supplied on a Reel) (ex VAT)
₪ 4.533
Each (Supplied on a Reel) (inc VAT)
10
₪ 3.874
Each (Supplied on a Reel) (ex VAT)
₪ 4.533
Each (Supplied on a Reel) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
10 - 90 | ₪ 3.874 | ₪ 38.74 |
100 - 240 | ₪ 3.44 | ₪ 34.40 |
250 - 490 | ₪ 2.993 | ₪ 29.93 |
500 - 990 | ₪ 2.223 | ₪ 22.23 |
1000+ | ₪ 1.748 | ₪ 17.48 |
Technical documents
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.