Nexperia PBSS8110X,135 NPN Transistor, 1 A, 100 V, 3-Pin SOT-89
Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-89
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.6 x 2.6 x 1.6mm
Country of Origin
Hong Kong
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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₪ 79.50
₪ 3.18 Each (In a Pack of 25) (ex VAT)
₪ 93.02
₪ 3.721 Each (In a Pack of 25) (inc. VAT)
Standard
25
₪ 79.50
₪ 3.18 Each (In a Pack of 25) (ex VAT)
₪ 93.02
₪ 3.721 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 225 | ₪ 3.18 | ₪ 79.50 |
| 250 - 600 | ₪ 1.74 | ₪ 43.50 |
| 625 - 2475 | ₪ 1.68 | ₪ 42.00 |
| 2500+ | ₪ 1.44 | ₪ 36.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-89
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.6 x 2.6 x 1.6mm
Country of Origin
Hong Kong
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products