Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-40 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.7 x 6.7 x 3.7mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
₪ 61.20
₪ 3.06 Each (Supplied on a Reel) (ex VAT)
₪ 71.60
₪ 3.58 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
20
₪ 61.20
₪ 3.06 Each (Supplied on a Reel) (ex VAT)
₪ 71.60
₪ 3.58 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
20
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 20 - 40 | ₪ 3.06 | ₪ 30.60 |
| 50 - 90 | ₪ 2.805 | ₪ 28.05 |
| 100+ | ₪ 2.07 | ₪ 20.70 |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-40 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.7 x 6.7 x 3.7mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


