Nexperia PBSS4160DS,115 Dual NPN Transistor, 1 A, 60 V, 6-Pin TSOP
Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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₪ 54.60
₪ 2.73 Each (In a Pack of 20) (ex VAT)
₪ 63.88
₪ 3.194 Each (In a Pack of 20) (inc. VAT)
Standard
20
₪ 54.60
₪ 2.73 Each (In a Pack of 20) (ex VAT)
₪ 63.88
₪ 3.194 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 20 | ₪ 2.73 | ₪ 54.60 |
| 40 - 80 | ₪ 2.67 | ₪ 53.40 |
| 100 - 180 | ₪ 1.41 | ₪ 28.20 |
| 200 - 380 | ₪ 1.365 | ₪ 27.30 |
| 400+ | ₪ 1.305 | ₪ 26.10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products