Technical documents
Specifications
Country of Origin
Malaysia
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
₪ 116.25
₪ 0.93 Each (Supplied on a Reel) (ex VAT)
₪ 136.01
₪ 1.088 Each (Supplied on a Reel) (inc. VAT)
125
₪ 116.25
₪ 0.93 Each (Supplied on a Reel) (ex VAT)
₪ 136.01
₪ 1.088 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
125
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 125 - 225 | ₪ 0.93 | ₪ 23.25 |
| 250 - 475 | ₪ 0.885 | ₪ 22.12 |
| 500 - 975 | ₪ 0.855 | ₪ 21.38 |
| 1000+ | ₪ 0.735 | ₪ 18.38 |
Technical documents
Specifications
Country of Origin
Malaysia
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


