Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-250 mA
Maximum Collector Emitter Voltage
-400 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-500 V
Maximum Emitter Base Voltage
-6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
High Voltage Transistors, Nexperia
Bipolar Transistors, Nexperia
₪ 103.50
₪ 2.07 Each (Supplied on a Reel) (ex VAT)
₪ 121.10
₪ 2.422 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
₪ 103.50
₪ 2.07 Each (Supplied on a Reel) (ex VAT)
₪ 121.10
₪ 2.422 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 100 | ₪ 2.07 | ₪ 51.75 |
| 125 - 225 | ₪ 1.995 | ₪ 49.88 |
| 250+ | ₪ 1.92 | ₪ 48.00 |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-250 mA
Maximum Collector Emitter Voltage
-400 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-500 V
Maximum Emitter Base Voltage
-6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details


