Nexperia P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-223 BSP250,115
Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.7mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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₪ 55.20
₪ 5.52 Each (Supplied on a Reel) (ex VAT)
₪ 64.58
₪ 6.458 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
₪ 55.20
₪ 5.52 Each (Supplied on a Reel) (ex VAT)
₪ 64.58
₪ 6.458 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 10 - 45 | ₪ 5.52 | ₪ 27.60 |
| 50 - 245 | ₪ 5.01 | ₪ 25.05 |
| 250 - 495 | ₪ 4.515 | ₪ 22.58 |
| 500+ | ₪ 3.96 | ₪ 19.80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.7mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products