Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
520 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
₪ 68.25
₪ 2.73 Each (Supplied as a Tape) (ex VAT)
₪ 79.85
₪ 3.194 Each (Supplied as a Tape) (inc. VAT)
Standard
25
₪ 68.25
₪ 2.73 Each (Supplied as a Tape) (ex VAT)
₪ 79.85
₪ 3.194 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Tape |
|---|---|---|
| 25 - 25 | ₪ 2.73 | ₪ 68.25 |
| 50 - 100 | ₪ 2.64 | ₪ 66.00 |
| 125 - 225 | ₪ 1.41 | ₪ 35.25 |
| 250 - 475 | ₪ 1.365 | ₪ 34.12 |
| 500+ | ₪ 1.215 | ₪ 30.38 |
Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
520 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details


