N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip MMF65R190PTH

RS Stock No.: 871-5044Brand: MagnaChipManufacturers Part No.: MMF65R190PTH
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

53 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Product details

Super Junction (SJ) MOSFET

These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.

Low EMI
Low power loss through high speed switching and low on-resistance

MOSFET Transistors, MagnaChip

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₪ 11.775

Each (In a Tube of 5) (ex VAT)

₪ 13.777

Each (In a Tube of 5) (inc VAT)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip MMF65R190PTH
Select packaging type

₪ 11.775

Each (In a Tube of 5) (ex VAT)

₪ 13.777

Each (In a Tube of 5) (inc VAT)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip MMF65R190PTH
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

53 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Product details

Super Junction (SJ) MOSFET

These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.

Low EMI
Low power loss through high speed switching and low on-resistance

MOSFET Transistors, MagnaChip