N-Channel MOSFET, 29 A, 30 V, 8-Pin PowerDFN33 MagnaChip MDV1527URH

RS Stock No.: 871-5022Brand: MagnaChipManufacturers Part No.: MDV1527URH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

23.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

23.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.2mm

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Width

3.2mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

0.8mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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₪ 1.328

Each (On a Reel of 25) (ex VAT)

₪ 1.554

Each (On a Reel of 25) (inc VAT)

N-Channel MOSFET, 29 A, 30 V, 8-Pin PowerDFN33 MagnaChip MDV1527URH
Select packaging type

₪ 1.328

Each (On a Reel of 25) (ex VAT)

₪ 1.554

Each (On a Reel of 25) (inc VAT)

N-Channel MOSFET, 29 A, 30 V, 8-Pin PowerDFN33 MagnaChip MDV1527URH
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

23.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

23.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.2mm

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Width

3.2mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

0.8mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more