N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1512RH

RS Stock No.: 871-5000Brand: MagnaChipManufacturers Part No.: MDU1512RH
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

69.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

35.3 nC @ 10 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1512RH

P.O.A.

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerDFN56 MagnaChip MDU1512RH
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

69.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

35.3 nC @ 10 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip