N-Channel MOSFET, 19 A, 30 V, 8-Pin SOIC MagnaChip MDS1524URH

RS Stock No.: 871-4978Brand: MagnaChipManufacturers Part No.: MDS1524URH
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

5.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.9mm

Typical Gate Charge @ Vgs

16.2 nC @ 10 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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₪ 1.566

Each (On a Reel of 25) (ex VAT)

₪ 1.832

Each (On a Reel of 25) (inc VAT)

N-Channel MOSFET, 19 A, 30 V, 8-Pin SOIC MagnaChip MDS1524URH
Select packaging type

₪ 1.566

Each (On a Reel of 25) (ex VAT)

₪ 1.832

Each (On a Reel of 25) (inc VAT)

N-Channel MOSFET, 19 A, 30 V, 8-Pin SOIC MagnaChip MDS1524URH
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

5.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.9mm

Typical Gate Charge @ Vgs

16.2 nC @ 10 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more