Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 906-2892PBrand: InfineonManufacturers Part No.: IKW25N120H3FKSA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

326 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1430pF

Maximum Operating Temperature

+175 °C

Energy Rating

4.3mJ

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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₪ 308.43

₪ 51.405 Each (Supplied in a Tube) (ex VAT)

₪ 360.86

₪ 60.144 Each (Supplied in a Tube) (inc. VAT)

Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

6

Available in multiples of 2
6₪ 308.43
8₪ 411.24
10₪ 514.05
12₪ 616.86
14₪ 719.67
16₪ 822.48
18₪ 925.29
20₪ 992.40
22₪ 1,091.64
24₪ 1,190.88
26₪ 1,290.12
28₪ 1,389.36
30₪ 1,488.60
32₪ 1,587.84
34₪ 1,687.08

₪ 308.43

₪ 51.405 Each (Supplied in a Tube) (ex VAT)

₪ 360.86

₪ 60.144 Each (Supplied in a Tube) (inc. VAT)

Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

Stock information temporarily unavailable.

Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

6

Available in multiples of 2
6₪ 308.43
8₪ 411.24
10₪ 514.05
12₪ 616.86
14₪ 719.67
16₪ 822.48
18₪ 925.29
20₪ 992.40
22₪ 1,091.64
24₪ 1,190.88
26₪ 1,290.12
28₪ 1,389.36
30₪ 1,488.60
32₪ 1,587.84
34₪ 1,687.08

Stock information temporarily unavailable.

quantityUnit pricePer Tube
6 - 18₪ 51.405₪ 102.81
20 - 38₪ 49.62₪ 99.24
40 - 98₪ 48.12₪ 96.24
100+₪ 41.88₪ 83.76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

326 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1430pF

Maximum Operating Temperature

+175 °C

Energy Rating

4.3mJ

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more