Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

RS Stock No.: 110-7783Brand: InfineonManufacturers Part No.: IKP15N60TXKSA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

26 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

130 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Maximum Operating Temperature

+175 °C

Energy Rating

0.81mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

860pF

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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₪ 176.25

₪ 17.625 Each (In a Pack of 10) (ex VAT)

₪ 206.21

₪ 20.621 Each (In a Pack of 10) (inc. VAT)

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10₪ 176.25
20₪ 352.50
30₪ 528.75
40₪ 705.00
50₪ 773.25
60₪ 927.90
70₪ 1,082.55
80₪ 1,237.20
90₪ 1,391.85
100₪ 1,546.50
110₪ 1,701.15
120₪ 1,855.80
130₪ 2,010.45
140₪ 2,165.10
150₪ 2,319.75

₪ 176.25

₪ 17.625 Each (In a Pack of 10) (ex VAT)

₪ 206.21

₪ 20.621 Each (In a Pack of 10) (inc. VAT)

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10₪ 176.25
20₪ 352.50
30₪ 528.75
40₪ 705.00
50₪ 773.25
60₪ 927.90
70₪ 1,082.55
80₪ 1,237.20
90₪ 1,391.85
100₪ 1,546.50
110₪ 1,701.15
120₪ 1,855.80
130₪ 2,010.45
140₪ 2,165.10
150₪ 2,319.75

Stock information temporarily unavailable.

quantityUnit pricePer Pack
10 - 40₪ 17.625₪ 176.25
50 - 240₪ 15.465₪ 154.65
250 - 490₪ 13.245₪ 132.45
500 - 1240₪ 11.76₪ 117.60
1250+₪ 10.815₪ 108.15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

26 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

130 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Maximum Operating Temperature

+175 °C

Energy Rating

0.81mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

860pF

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more