Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263), Surface Mount

RS Stock No.: 110-7122PBrand: InfineonManufacturers Part No.: IGB30N60H3ATMA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.31 x 9.45 x 4.57mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.55mJ

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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₪ 529.50

₪ 21.18 Each (Supplied on a Reel) (ex VAT)

₪ 619.52

₪ 24.781 Each (Supplied on a Reel) (inc. VAT)

Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263), Surface Mount
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25₪ 529.50
30₪ 635.40
35₪ 741.30
40₪ 847.20
45₪ 953.10
50₪ 1,059.00
55₪ 1,164.90
60₪ 1,270.80
65₪ 1,376.70
70₪ 1,482.60
75₪ 1,588.50
80₪ 1,694.40
85₪ 1,800.30
90₪ 1,906.20
95₪ 2,012.10

₪ 529.50

₪ 21.18 Each (Supplied on a Reel) (ex VAT)

₪ 619.52

₪ 24.781 Each (Supplied on a Reel) (inc. VAT)

Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263), Surface Mount

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25₪ 529.50
30₪ 635.40
35₪ 741.30
40₪ 847.20
45₪ 953.10
50₪ 1,059.00
55₪ 1,164.90
60₪ 1,270.80
65₪ 1,376.70
70₪ 1,482.60
75₪ 1,588.50
80₪ 1,694.40
85₪ 1,800.30
90₪ 1,906.20
95₪ 2,012.10

Stock information temporarily unavailable.

quantityUnit pricePer Reel
25 - 95₪ 21.18₪ 105.90
100 - 245₪ 17.22₪ 86.10
250 - 495₪ 16.365₪ 81.82
500+₪ 15.495₪ 77.48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.31 x 9.45 x 4.57mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.55mJ

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more