Technical documents
Specifications
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Maximum Operating Supply Voltage
3.65 V
Width
4mm
Height
0.7mm
Maximum Operating Temperature
+85 °C
Automotive Standard
AEC-Q100
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
₪ 304.20
₪ 20.28 Each (Supplied in a Tube) (ex VAT)
₪ 355.91
₪ 23.728 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
15
₪ 304.20
₪ 20.28 Each (Supplied in a Tube) (ex VAT)
₪ 355.91
₪ 23.728 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
15
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
15 - 25 | ₪ 20.28 | ₪ 101.40 |
30 - 95 | ₪ 19.56 | ₪ 97.80 |
100 - 495 | ₪ 18.435 | ₪ 92.18 |
500+ | ₪ 17.235 | ₪ 86.18 |
Technical documents
Specifications
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Maximum Operating Supply Voltage
3.65 V
Width
4mm
Height
0.7mm
Maximum Operating Temperature
+85 °C
Automotive Standard
AEC-Q100
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.