Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Stock information temporarily unavailable.
P.O.A.
Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V
Select packaging type
Production pack (Tray)
1
P.O.A.
Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V
Stock information temporarily unavailable.
Select packaging type
Production pack (Tray)
1
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2