Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
62 mm
Configuration
Common Emitter
Channel Type
N
Pin Count
7
Transistor Configuration
Common Emitter
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Stock information temporarily unavailable.
P.O.A.
Infineon FF600R12KE4EBOSA1 Common Emitter IGBT Module, 600 A 1200 V, 7-Pin 62 mm
10
P.O.A.
Infineon FF600R12KE4EBOSA1 Common Emitter IGBT Module, 600 A 1200 V, 7-Pin 62 mm
Stock information temporarily unavailable.
10
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
62 mm
Configuration
Common Emitter
Channel Type
N
Pin Count
7
Transistor Configuration
Common Emitter