P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2

RS Stock No.: 892-2217Brand: InfineonManufacturers Part No.: BSS84P
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Transistor Material

Si

Width

1.3mm

Number of Elements per Chip

1

Forward Diode Voltage

1.24V

Height

0.9mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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₪ 0.755

Each (In a Pack of 250) (ex VAT)

₪ 0.883

Each (In a Pack of 250) (inc VAT)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Select packaging type

₪ 0.755

Each (In a Pack of 250) (ex VAT)

₪ 0.883

Each (In a Pack of 250) (inc VAT)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
250 - 250₪ 0.755₪ 188.78
500 - 1000₪ 0.657₪ 164.31
1250 - 2250₪ 0.434₪ 108.38
2500 - 4750₪ 0.42₪ 104.88
5000+₪ 0.336₪ 83.90

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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Transistor Material

Si

Width

1.3mm

Number of Elements per Chip

1

Forward Diode Voltage

1.24V

Height

0.9mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.