Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Height
0.8mm
Series
OptiMOS P
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 0.238
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₪ 0.278
Each (On a Reel of 500) (inc VAT)
500
₪ 0.238
Each (On a Reel of 500) (ex VAT)
₪ 0.278
Each (On a Reel of 500) (inc VAT)
500
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Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Height
0.8mm
Series
OptiMOS P
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.