N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6327XTSA1

RS Stock No.: 826-9989Brand: InfineonManufacturers Part No.: BSS138WH6327XTSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.8mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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₪ 0.853

Each (On a Reel of 500) (ex VAT)

₪ 0.998

Each (On a Reel of 500) (inc VAT)

N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6327XTSA1

₪ 0.853

Each (On a Reel of 500) (ex VAT)

₪ 0.998

Each (On a Reel of 500) (inc VAT)

N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6327XTSA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
500 - 1000₪ 0.853₪ 426.51
1500 - 2500₪ 0.587₪ 293.66
3000 - 5500₪ 0.475₪ 237.73
6000+₪ 0.42₪ 209.76

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.8mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.