Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Stock information temporarily unavailable.
₪ 1,890.00
₪ 0.63 Each (On a Reel of 3000) (ex VAT)
₪ 2,211.30
₪ 0.737 Each (On a Reel of 3000) (inc. VAT)
3000
₪ 1,890.00
₪ 0.63 Each (On a Reel of 3000) (ex VAT)
₪ 2,211.30
₪ 0.737 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details


