Fuji Electric 2MBi200U4H-120-50, M249 , N-Channel Series IGBT Module, 200 A max, 1200 V, Panel Mount
Technical documents
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.04 kW
Package Type
M249
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
108 x 62 x 30mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 1,012.90
Each (ex VAT)
₪ 1,185.09
Each (inc VAT)
1
₪ 1,012.90
Each (ex VAT)
₪ 1,185.09
Each (inc VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 1 | ₪ 1,012.90 |
| 2 - 4 | ₪ 926.64 |
| 5 - 9 | ₪ 899.21 |
| 10 - 19 | ₪ 881.05 |
| 20+ | ₪ 876.29 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.04 kW
Package Type
M249
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
108 x 62 x 30mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products