Technical documents
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Isolated
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
3
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1A
Country of Origin
China
Product details
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
₪ 113.25
₪ 2.265 Each (In a Pack of 50) (ex VAT)
₪ 132.50
₪ 2.65 Each (In a Pack of 50) (inc. VAT)
Standard
50
₪ 113.25
₪ 2.265 Each (In a Pack of 50) (ex VAT)
₪ 132.50
₪ 2.65 Each (In a Pack of 50) (inc. VAT)
Standard
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
50 - 550 | ₪ 2.265 | ₪ 113.25 |
600 - 1450 | ₪ 1.035 | ₪ 51.75 |
1500+ | ₪ 0.825 | ₪ 41.25 |
Technical documents
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Isolated
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
3
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1A
Country of Origin
China
Product details
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.