Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
₪ 48.90
₪ 4.89 Each (In a Pack of 10) (ex VAT)
₪ 57.21
₪ 5.721 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 48.90
₪ 4.89 Each (In a Pack of 10) (ex VAT)
₪ 57.21
₪ 5.721 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | ₪ 4.89 | ₪ 48.90 |
| 50 - 190 | ₪ 3.81 | ₪ 38.10 |
| 200 - 490 | ₪ 3.285 | ₪ 32.85 |
| 500+ | ₪ 3.06 | ₪ 30.60 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details


