P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1022UFDE-7
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Width
2.05mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.58mm
Country of Origin
China
Product details
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
₪ 3.09
Each (In a Pack of 25) (ex VAT)
₪ 3.615
Each (In a Pack of 25) (inc VAT)
25
₪ 3.09
Each (In a Pack of 25) (ex VAT)
₪ 3.615
Each (In a Pack of 25) (inc VAT)
25
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 125 | ₪ 3.09 | ₪ 77.26 |
| 150 - 725 | ₪ 1.72 | ₪ 43.00 |
| 750 - 1475 | ₪ 1.678 | ₪ 41.95 |
| 1500+ | ₪ 1.342 | ₪ 33.56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Width
2.05mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.58mm
Country of Origin
China
Product details
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products