Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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Please check again later.
₪ 0.755
Each (In a Pack of 100) (ex VAT)
₪ 0.883
Each (In a Pack of 100) (inc VAT)
100
₪ 0.755
Each (In a Pack of 100) (ex VAT)
₪ 0.883
Each (In a Pack of 100) (inc VAT)
100
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
100 - 400 | ₪ 0.755 | ₪ 75.51 |
500 - 900 | ₪ 0.727 | ₪ 72.72 |
1000 - 1400 | ₪ 0.657 | ₪ 65.72 |
1500 - 2900 | ₪ 0.643 | ₪ 64.33 |
3000+ | ₪ 0.461 | ₪ 46.15 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details