Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Please check again later.
₪ 0.42
Each (In a Pack of 200) (ex VAT)
₪ 0.491
Each (In a Pack of 200) (inc VAT)
200
₪ 0.42
Each (In a Pack of 200) (ex VAT)
₪ 0.491
Each (In a Pack of 200) (inc VAT)
200
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
200 - 1400 | ₪ 0.42 | ₪ 83.90 |
1600+ | ₪ 0.322 | ₪ 64.33 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details