N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2450UFB4-7R

RS Stock No.: 182-6891Brand: DiodesZetexManufacturers Part No.: DMN2450UFB4-7R
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

0.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.05mm

Typical Gate Charge @ Vgs

1.3 nC @ 10 V

Height

0.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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₪ 0.336

Each (On a Reel of 3000) (ex VAT)

₪ 0.393

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2450UFB4-7R

₪ 0.336

Each (On a Reel of 3000) (ex VAT)

₪ 0.393

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2450UFB4-7R
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
3000 - 6000₪ 0.336₪ 1,006.85
9000 - 12000₪ 0.28₪ 839.04
15000+₪ 0.266₪ 797.09

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

0.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.05mm

Typical Gate Charge @ Vgs

1.3 nC @ 10 V

Height

0.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China