Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
₪ 97.12
₪ 3.885 Each (Supplied as a Tape) (ex VAT)
₪ 113.63
₪ 4.545 Each (Supplied as a Tape) (inc. VAT)
Standard
25
₪ 97.12
₪ 3.885 Each (Supplied as a Tape) (ex VAT)
₪ 113.63
₪ 4.545 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Tape |
|---|---|---|
| 25 - 125 | ₪ 3.885 | ₪ 97.12 |
| 150 - 725 | ₪ 2.43 | ₪ 60.75 |
| 750 - 1475 | ₪ 2.205 | ₪ 55.12 |
| 1500+ | ₪ 1.935 | ₪ 48.38 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
Country of Origin
China
Product details


