N-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-323 Diodes Inc DMN2065UW-7

RS Stock No.: 823-2930Brand: DiodesZetexManufacturers Part No.: DMN2065UW-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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₪ 0.364

Each (In a Pack of 100) (ex VAT)

₪ 0.426

Each (In a Pack of 100) (inc VAT)

N-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-323 Diodes Inc DMN2065UW-7
Select packaging type

₪ 0.364

Each (In a Pack of 100) (ex VAT)

₪ 0.426

Each (In a Pack of 100) (inc VAT)

N-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-323 Diodes Inc DMN2065UW-7
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more