Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
11.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 113.25
₪ 2.265 Each (In a Pack of 50) (ex VAT)
₪ 132.50
₪ 2.65 Each (In a Pack of 50) (inc. VAT)
Standard
50
₪ 113.25
₪ 2.265 Each (In a Pack of 50) (ex VAT)
₪ 132.50
₪ 2.65 Each (In a Pack of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 200 | ₪ 2.265 | ₪ 113.25 |
| 250 - 450 | ₪ 1.035 | ₪ 51.75 |
| 500 - 1200 | ₪ 1.005 | ₪ 50.25 |
| 1250 - 2450 | ₪ 0.84 | ₪ 42.00 |
| 2500+ | ₪ 0.81 | ₪ 40.50 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
11.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details


