N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002-7-F

RS Stock No.: 122-0588Brand: DiodesZetexManufacturers Part No.: 2N7002-7-F
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₪ 0.252

Each (On a Reel of 3000) (ex VAT)

₪ 0.295

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002-7-F

₪ 0.252

Each (On a Reel of 3000) (ex VAT)

₪ 0.295

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002-7-F
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
3000 - 3000₪ 0.252₪ 755.14
6000 - 9000₪ 0.252₪ 755.14
12000 - 27000₪ 0.154₪ 461.47
30000 - 57000₪ 0.154₪ 461.47
60000+₪ 0.154₪ 461.47

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.