Infineon, Serial F-RAM

RS Stock No.: 124-4170Brand: InfineonManufacturers Part No.: CY15FRAMKIT-001
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Technical documents

Specifications

Product Name

Serial F-RAM

Kit Classification

Arduino Shield

Processor Part Number

CY15FRAMKIT-001

Product details

CY15FRAMKIT-001 Serial F-RAM Development Kit (Arduino-Compatible)

The CY15FRAMKIT-001 is an F-RAM (Ferroelectric RAM) development kit for high-performance, high-reliability and energy efficient serial F-RAM devices.
The CY15FRAMKIT-001 kit has been designed to operate with the Arduino UNO R3 board with stackable connectors.

Compatible with CY8CKIT-042, CY8CKIT-042-BLE and CY8CKIT-040 kits
256 Kbit SPI F-RAM and a 256 Kbit I²C F-RAM
Power supply operation at 3.3 V or 5.0 V

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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₪ 374.20

Each (ex VAT)

₪ 437.81

Each (inc VAT)

Infineon, Serial F-RAM

₪ 374.20

Each (ex VAT)

₪ 437.81

Each (inc VAT)

Infineon, Serial F-RAM
Stock information temporarily unavailable.

Technical documents

Specifications

Product Name

Serial F-RAM

Kit Classification

Arduino Shield

Processor Part Number

CY15FRAMKIT-001

Product details

CY15FRAMKIT-001 Serial F-RAM Development Kit (Arduino-Compatible)

The CY15FRAMKIT-001 is an F-RAM (Ferroelectric RAM) development kit for high-performance, high-reliability and energy efficient serial F-RAM devices.
The CY15FRAMKIT-001 kit has been designed to operate with the Arduino UNO R3 board with stackable connectors.

Compatible with CY8CKIT-042, CY8CKIT-042-BLE and CY8CKIT-040 kits
256 Kbit SPI F-RAM and a 256 Kbit I²C F-RAM
Power supply operation at 3.3 V or 5.0 V

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.