Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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₪ 5.691
Each (In a Tube of 50) (ex VAT)
₪ 6.659
Each (In a Tube of 50) (inc. VAT)
50
₪ 5.691
Each (In a Tube of 50) (ex VAT)
₪ 6.659
Each (In a Tube of 50) (inc. VAT)
50
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.