onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
Technical documents
Specifications
Brand
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 265.12
₪ 10.605 Each (Supplied on a Reel) (ex VAT)
₪ 310.19
₪ 12.408 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
₪ 265.12
₪ 10.605 Each (Supplied on a Reel) (ex VAT)
₪ 310.19
₪ 12.408 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 25 - 45 | ₪ 10.605 | ₪ 53.02 |
| 50 - 245 | ₪ 9.54 | ₪ 47.70 |
| 250 - 495 | ₪ 8.40 | ₪ 42.00 |
| 500+ | ₪ 7.59 | ₪ 37.95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products