Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
Please check again later.
₪ 1.077
Each (In a Pack of 100) (ex VAT)
₪ 1.26
Each (In a Pack of 100) (inc. VAT)
Standard
100
₪ 1.077
Each (In a Pack of 100) (ex VAT)
₪ 1.26
Each (In a Pack of 100) (inc. VAT)
Standard
100
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
100 - 400 | ₪ 1.077 | ₪ 107.68 |
500 - 900 | ₪ 0.811 | ₪ 81.11 |
1000 - 4900 | ₪ 0.741 | ₪ 74.12 |
5000 - 9900 | ₪ 0.657 | ₪ 65.72 |
10000+ | ₪ 0.587 | ₪ 58.73 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.