Technical documents
Specifications
Brand
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
23
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 528.05
Each (In a Box of 6) (ex VAT)
₪ 617.818
Each (In a Box of 6) (inc VAT)
6
₪ 528.05
Each (In a Box of 6) (ex VAT)
₪ 617.818
Each (In a Box of 6) (inc VAT)
6
Buy in bulk
quantity | Unit price | Per Box |
---|---|---|
6 - 24 | ₪ 528.05 | ₪ 3,168.30 |
30 - 54 | ₪ 496.264 | ₪ 2,977.59 |
60+ | ₪ 486.993 | ₪ 2,921.96 |
Technical documents
Specifications
Brand
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
23
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.