Semikron Danfoss SKM145GB066D Dual Half Bridge IGBT Module, 195 A 600 V, 7-Pin SEMITRANS2, Panel Mount
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
195 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 29.5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Width
34mm
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₪ 982.65
₪ 982.65 Each (ex VAT)
₪ 1,149.70
₪ 1,149.70 Each (inc. VAT)
1
₪ 982.65
₪ 982.65 Each (ex VAT)
₪ 1,149.70
₪ 1,149.70 Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 1 | ₪ 982.65 |
| 2 - 4 | ₪ 948.14 |
| 5 - 9 | ₪ 840.69 |
| 10 - 19 | ₪ 765.39 |
| 20+ | ₪ 738.16 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
195 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 29.5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Width
34mm
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products