Texas Instruments NexFET P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
₪ 56.85
₪ 11.37 Each (In a Pack of 5) (ex VAT)
₪ 66.51
₪ 13.303 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 56.85
₪ 11.37 Each (In a Pack of 5) (ex VAT)
₪ 66.51
₪ 13.303 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | ₪ 11.37 | ₪ 56.85 |
15 - 45 | ₪ 9.21 | ₪ 46.05 |
50 - 245 | ₪ 8.25 | ₪ 41.25 |
250 - 495 | ₪ 7.305 | ₪ 36.52 |
500+ | ₪ 6.555 | ₪ 32.78 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details