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STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220 STP9NK50Z

RS Stock No.: 920-8708Brand: STMicroelectronicsManufacturers Part No.: STP9NK50Z
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.4mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 143.25

₪ 2.865 Each (In a Tube of 50) (ex VAT)

₪ 167.60

₪ 3.352 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220 STP9NK50Z

₪ 143.25

₪ 2.865 Each (In a Tube of 50) (ex VAT)

₪ 167.60

₪ 3.352 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220 STP9NK50Z
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.4mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more