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STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247

RS Stock No.: 103-1578Brand: STMicroelectronicsManufacturers Part No.: BU508AW
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Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Stock information temporarily unavailable.

₪ 608.85

₪ 20.295 Each (In a Tube of 30) (ex VAT)

₪ 712.35

₪ 23.745 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247

₪ 608.85

₪ 20.295 Each (In a Tube of 30) (ex VAT)

₪ 712.35

₪ 23.745 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 30₪ 20.295₪ 608.85
60 - 90₪ 18.93₪ 567.90
120 - 270₪ 17.925₪ 537.75
300 - 570₪ 17.19₪ 515.70
600+₪ 15.675₪ 470.25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more