Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
74 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.51mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
2500pF
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
₪ 1,221.60
₪ 30.54 Each (Supplied in a Tube) (ex VAT)
₪ 1,429.27
₪ 35.732 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
40
₪ 1,221.60
₪ 30.54 Each (Supplied in a Tube) (ex VAT)
₪ 1,429.27
₪ 35.732 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
40
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
40 - 196 | ₪ 30.54 | ₪ 122.16 |
200 - 396 | ₪ 28.215 | ₪ 112.86 |
400 - 996 | ₪ 26.925 | ₪ 107.70 |
1000+ | ₪ 23.25 | ₪ 93.00 |
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
74 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.51mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
2500pF
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.