Disruption To Air Freight Service

Due to the ongoing situation in the region air freight services are being restricted and thus delivery times are being affected. For further information please contact sales@rsisrael.co.il

STMicroelectronics MDmesh M2 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 STW24N60M2

RS Stock No.: 783-3090Brand: STMicroelectronicsManufacturers Part No.: STW24N60M2
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

₪ 65.85

₪ 13.17 Each (In a Pack of 5) (ex VAT)

₪ 77.04

₪ 15.409 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 STW24N60M2
Select packaging type

₪ 65.85

₪ 13.17 Each (In a Pack of 5) (ex VAT)

₪ 77.04

₪ 15.409 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 STW24N60M2
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more