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STMicroelectronics FDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF11NM60ND

RS Stock No.: 168-7567Brand: STMicroelectronicsManufacturers Part No.: STF11NM60ND
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

FDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

10.4mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.6mm

Height

16.4mm

Product details

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 1,310.25

₪ 26.205 Each (In a Tube of 50) (ex VAT)

₪ 1,532.99

₪ 30.66 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics FDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF11NM60ND

50

Available in multiples of 50
50₪ 1,310.25
100₪ 2,620.50
150₪ 3,930.75
200₪ 5,241.00
250₪ 6,551.25
300₪ 7,861.50
350₪ 9,171.75
400₪ 10,482.00
450₪ 11,792.25
500₪ 13,102.50
550₪ 14,412.75
600₪ 15,723.00
650₪ 17,033.25
700₪ 18,343.50
750₪ 19,653.75

₪ 1,310.25

₪ 26.205 Each (In a Tube of 50) (ex VAT)

₪ 1,532.99

₪ 30.66 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics FDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF11NM60ND
Stock information temporarily unavailable.

50

Available in multiples of 50
50₪ 1,310.25
100₪ 2,620.50
150₪ 3,930.75
200₪ 5,241.00
250₪ 6,551.25
300₪ 7,861.50
350₪ 9,171.75
400₪ 10,482.00
450₪ 11,792.25
500₪ 13,102.50
550₪ 14,412.75
600₪ 15,723.00
650₪ 17,033.25
700₪ 18,343.50
750₪ 19,653.75

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

FDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

10.4mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.6mm

Height

16.4mm

Product details

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more