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STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10.5 A, 800 V, 3-Pin TO-247 STW12NK80Z

RS Stock No.: 920-8859Brand: STMicroelectronicsManufacturers Part No.: STW12NK80Z
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.5 A

Maximum Drain Source Voltage

800 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

87 nC @ 10 V

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.15mm

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 1,022.85

₪ 34.095 Each (In a Tube of 30) (ex VAT)

₪ 1,196.73

₪ 39.891 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10.5 A, 800 V, 3-Pin TO-247 STW12NK80Z

₪ 1,022.85

₪ 34.095 Each (In a Tube of 30) (ex VAT)

₪ 1,196.73

₪ 39.891 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10.5 A, 800 V, 3-Pin TO-247 STW12NK80Z
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 30₪ 34.095₪ 1,022.85
60 - 90₪ 31.665₪ 949.95
120 - 270₪ 29.865₪ 895.95
300 - 570₪ 28.815₪ 864.45
600+₪ 26.205₪ 786.15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.5 A

Maximum Drain Source Voltage

800 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

87 nC @ 10 V

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.15mm

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more